BUK9Y07-30B N-channel TrenchMOS logic level FET

1.1 General description 

        Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits 

 Low conduction losses due to low on-state resistance 

 Q101 compliant 

 Suitable for logic level gate drive sources 

 Suitable for thermally demanding environments due to 175 °C rating

1.3 Applications 

 12 V loads 

 Automotive systems 

 General purpose power switching 

 Motors, lamps and solenoids