N01L63W3AT25I 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K 16 bit

Overview

        The N01L63W3A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N01L63W3A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages compatible with other standard 64Kb x 16 SRAMs.

Features

• Single Wide Power Supply Range 

    2.3 to 3.6 Volts 

• Very low standby current 

    2.0µA at 3.0V (Typical) 

• Very low operating current 

    2.0mA at 3.0V and 1µs (Typical) 

• Very low Page Mode operating current 

    0.8mA at 3.0V and 1µs (Typical) 

• Simple memory control 

    Single Chip Enable (CE) 

    Byte control for independent byte operation 

    Output Enable (OE) for memory expansion 

• Low voltage data retention 

    Vcc = 1.8V 

• Very fast output enable access time 

    30ns OE access time 

• Automatic power down to standby mode 

• TTL compatible three-state output driver 

• Compact space saving BGA package available