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OWEIS ELECTRONICS

Product Details
  • image of FET, MOSFET Arrays>NXH003P120M3F2PTNG
  • image of FET, MOSFET Arrays>NXH003P120M3F2PTNG
  • image of FET, MOSFET Arrays>NXH003P120M3F2PTNG
  • image of FET, MOSFET Arrays>NXH003P120M3F2PTNG
Model NXH003P120M3F2PTNG
Product Category FET, MOSFET Arrays
Manufacturer Sanyo Semiconductor/onsemi
Description SILICON CARBIDE
Encapsulation -
Package Tray
RoHS Status 1
Price: $242.3200
Enter Quantity

Quantity

Price

Total Price

1

$258.7200

$258.7200

20

$242.3200

$4,846.4000

40

$233.2100

$9,328.4000

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image of FET, MOSFET Arrays>22031514
image of FET, MOSFET Arrays>22031514
22031514
Model
22031514
Product Category
FET, MOSFET Arrays
Manufacturer
Sanyo Semiconductor/onsemi
Description
SILICON CARBIDE
Encapsulation
-
Package
Tray
lang_roHSStatusStatus
1
Product parameters
PDF(1)
TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTray
Product StatusACTIVE
Package / CaseModule
Mounting TypeChassis Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologySilicon Carbide (SiC)
Power - Max1.48kW (Tj)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C435A (Tj)
Input Capacitance (Ciss) (Max) @ Vds20889pF @ 800V
Rds On (Max) @ Id, Vgs5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs1200nC @ 20V
Vgs(th) (Max) @ Id4.4V @ 160mA
Supplier Device Package36-PIM (56.7x62.8)
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